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Recent Nonpolar Optical Device Results Overview

Recent Nonpolar Optical Device Results Overview [Pg.352]

There have been several recent reports on the performance of nonpolar devices that includes a report on the demonstration of first nonpolar-nitride-based visible laser diode. Okamoto et al. [37] reported m-plane LEDs on single crystalline m-plane GaN substrate emitting at 435 nm with output power of [Pg.352]

The peak wavelength shift was less than 0.5 nm between 1 and 20 mA. More recently, Kim et al. [39] reported 402 nm m-plane LEDs on m-plane bulk GaN substrates with output power and EQE of 28 mW and 45.4%, respectively, at a pulsed drive current of 20 mA. With increasing current, the output power increased linearly and a fairly flat EQE was observed with increasing drive current. At 200 mA, the power and EQE were 250 mW and 41%, respectively. [Pg.353]


Recent Nonpolar Optical Device Results Overview... [Pg.352]




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