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Random implants damage profiles

Figure 4.10 Damage and doping profiles for the same set of random as-implanted 6H-SIC samples, (a) Comparison between RBS-C measured and MC-BCA simulated damage profiles. (From [73]. 1999 Elsevier B.V. Reprinted with permission.) (b) Comparison between SIMS measured and MC-BCA simulated chemical profiles. (From [72]. 2001 Material Science Forum. Reprinted with permission.)... Figure 4.10 Damage and doping profiles for the same set of random as-implanted 6H-SIC samples, (a) Comparison between RBS-C measured and MC-BCA simulated damage profiles. (From [73]. 1999 Elsevier B.V. Reprinted with permission.) (b) Comparison between SIMS measured and MC-BCA simulated chemical profiles. (From [72]. 2001 Material Science Forum. Reprinted with permission.)...
Fig. 8.10. (a) The 1.8-MeVHe backscattering spectra for random and (110) aligned Si crystal before and after damage by a 5 x 1014 cm-2, 200-keV B implant at -150°C. (b) The analyzed depth distribution of the disorder and the deposited energy into atomic collisions normalized to the disorder profile at a depth of 5,500 A (after Feldman et al. 1982)... [Pg.105]

See other pages where Random implants damage profiles is mentioned: [Pg.113]    [Pg.117]    [Pg.124]    [Pg.126]    [Pg.230]    [Pg.28]   


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