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Preparation Bridgman technique

Compounds in groups IIA-IVB may be prepared in bulk form by direct reaction and grown by gradient freeze or Bridgman techniques. Thin-film direct reaction is capable of making MgaSi in epitaxial form on silicon. ... [Pg.408]

A single crystal of Bi2Se3 lightly doped (0.12%) by Gd, which substitutes at sites of hexagonal symmetry, was prepared by the Bridgman technique, and its EPR spectra was analyzed to obtain spin-Hamiltonian parameters (Gratens et al., 1997). [Pg.71]

See other pages where Preparation Bridgman technique is mentioned: [Pg.378]    [Pg.199]    [Pg.269]    [Pg.76]    [Pg.199]    [Pg.269]    [Pg.156]    [Pg.424]    [Pg.424]    [Pg.55]    [Pg.378]    [Pg.269]    [Pg.74]    [Pg.171]    [Pg.463]    [Pg.448]    [Pg.12]    [Pg.54]    [Pg.95]    [Pg.292]   
See also in sourсe #XX -- [ Pg.125 ]



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