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Preferential dopant diffusion

is the mean-square average of the fluctuations of all dielectric constants, [Pg.90]

2 Fabrication Techniques of Graded-Index Preforms 91 Polymer gel phase qI preform [Pg.91]


Easy speciation and isotope detection have been identified as playing important roles in optimizing the production of superconducting NbsSn wires by heating a composite of bronze and niobium filaments. Application of TOF-LMMS has provided evidence of the out-diffusion and accumulation of phosphorous, inhibiting Nb3Sn formation when tin diffuses inward. The preferential incorporation of the lower tin isotopes in the NbsSn layer has confirmed the process to be driven by diffusion. The semiconductor industry has used TOF-LMMS to verify the lateral diffusion of dopants, e.g., boron in tantalum and cobalt silicide ruimers only 3 pm wide. Another application is the identification of microscopic residues left on integrated circuits after removal of the photoresist. [Pg.258]


See other pages where Preferential dopant diffusion is mentioned: [Pg.90]    [Pg.90]    [Pg.172]    [Pg.41]    [Pg.458]   
See also in sourсe #XX -- [ Pg.90 , Pg.91 ]




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Dopants diffusion

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