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Potential curves tungsten surface

Fig. 4. Potential energy versus distance from the surface. Data is appropriate for He and tungsten. E, is the ionization potential for helium and ( > is the work function of tungsten. E (e") is the kinetic energy of an emitted secondary electron. The symbol He + nej implies a system composed of an helium ion and n conduction electrons in tungsten. The lower potential curve results from an Auger neutralization process where both electrons were originally at the Fermi level. (The figure is similar to one published in Ref. )... Fig. 4. Potential energy versus distance from the surface. Data is appropriate for He and tungsten. E, is the ionization potential for helium and ( > is the work function of tungsten. E (e") is the kinetic energy of an emitted secondary electron. The symbol He + nej implies a system composed of an helium ion and n conduction electrons in tungsten. The lower potential curve results from an Auger neutralization process where both electrons were originally at the Fermi level. (The figure is similar to one published in Ref. )...
Fig. 11. Potential energy versus distance for a cesium atom (upper curve) and for an ion (lower curve) near a tungsten surface. Fig. 11. Potential energy versus distance for a cesium atom (upper curve) and for an ion (lower curve) near a tungsten surface.
Fig. 5. Potential curves relating to the adsorption of sodium on a tungsten surface. Fig. 5. Potential curves relating to the adsorption of sodium on a tungsten surface.
When a cesium atom is adsorbed on a tungsten surface, level A is higher than level D (Fig. 6) and the desorption of the cesium is in ionic form, provided that no external electric fields are used that will force atoms to evaporate. The potential curves of Fig. 6 are completely comparable to the formation of the ionic molecule of CsF from the atoms of cesium and fluorine (Fig. 7). [Pg.42]

Fig. 35 (Photo)current potential curves for n-type Si (Nj = 10 cm ) in 57% HI, irradiance 50 mW cm (tungsten halogen lamp), surface area = 0.21 cm. a) In the dark, b) under illumination, before porous photoetching, a ) in the dark, and b ) under illumination after porous photoetching (Q = 4 C cm ) (from Ref 27). Fig. 35 (Photo)current potential curves for n-type Si (Nj = 10 cm ) in 57% HI, irradiance 50 mW cm (tungsten halogen lamp), surface area = 0.21 cm. a) In the dark, b) under illumination, before porous photoetching, a ) in the dark, and b ) under illumination after porous photoetching (Q = 4 C cm ) (from Ref 27).

See other pages where Potential curves tungsten surface is mentioned: [Pg.313]    [Pg.337]    [Pg.41]    [Pg.301]    [Pg.1676]    [Pg.70]    [Pg.105]    [Pg.168]    [Pg.169]    [Pg.214]    [Pg.98]    [Pg.39]    [Pg.486]   
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