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Polysilane high polymers, photodegradation

It should be mentioned that these silicon-backbone polymers are highly absorptive, and must therefore be used in very thin films ( 30 nm), which can be prone to defects. Also, the principal electronic transition in these polysilane (with two-dimensional silicon backbone) and polysilane (three-dimensional silicon backbone) polymers when irradiated at 193 nm is most likely a (t-ct transition involving the all-silicon backbone. Due to this excitation, reaction pathways leading to scission of the Si-Si bonds lead to photodegradation of the polymer. [Pg.796]


See other pages where Polysilane high polymers, photodegradation is mentioned: [Pg.303]    [Pg.298]    [Pg.178]    [Pg.309]    [Pg.50]    [Pg.342]    [Pg.113]    [Pg.611]    [Pg.243]    [Pg.434]    [Pg.535]    [Pg.394]    [Pg.844]    [Pg.199]   


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