Polyimide , gate insulator

The first all polymer printed OTFT was reported by Bao and coworkers with polyimide (PI) as the gate insulator [42]. This was followed by the report of the first polymer integrated circuit (IC) by a group at Philips [43]. In this case, the dielectric was melamine-crosslinked PVP, and the electrodes were made of a conducting... 

Thin-fihn transistors have been fabricated by depositing 50 nm of CdS onto SiOz-covered n Si and evaporating two A1 elechodes (source and drain) onto the CdS [45]. Similar devices were also made using CdS deposited on polyimide substrates with three (source, drain, and gate) evaporated metal electrodes and various sputtered insulator layers for the gate electrode. 

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