Plasma metal organic vapour deposition

Wierzchofi, T. Sobiecki, J.R. Krupa, D. (1993). The Formation of Ti(OCN) Layers Produced from Metal-Organic Compwtmds Using Plasma-Assisted Chemical Vapour Deposition. Surf. Coat Technol., Vol. 59, pp. 217-220 Xinyao, Y. Zhongqing, J. Yuedong, M (2010). Effects of Sputtering Parameters on the Performance of Sputtered Cathodes for Direct Methanol Fuel Cells. Plasma Sci. Technol, Vol. 12, pp. 87-91... 

Other processes investigated for planar SOFC fabrication include electrostatic-assisted vapour deposition, vapour phase electrolytic deposition, vacuum evaporation, laser spraying, transfer printing, sedimentation method, and plasma metal organic chemical vapour deposition. 

The rapid development of solid state physics and technology during the last fifteen years has resulted in intensive studies of the application of plasma to thin film preparation and crystal growth The subjects included the use of the well known sputtering technique, chemical vapour deposition ( CVD ) of the solid in the plasma, as well as the direct oxidation and nitridation of solid surfaces by the plasma. The latter process, called plasma anodization 10, has found application in the preparation of thin oxide films of metals and semiconductors. One interesting use of this technique is the fabrication of complementary MOS devices11. Thin films of oxides, nitrides and organic polymers can also be prepared by plasma CVD. 

In chemical vapor deposition (CVD) reactive vapor precursors react to produce solid materials in the gas phase or at the solid-gas interface on the substrate surface at appropriate temperatures. Typical precursors used in the CVD process are metal hydrides, metal chlorides, and metal organic compounds. In the case that the precursor species are metal organic compounds, the process is called metal-organic chemical vapor deposition (MOCVD). The precursor molecules are introduced into a reactor sometimes with a carrier gas and decompose by means of heat, irradiation of UV light, or electrical plasma formed in the gas. Thermal CVD is the most commonly used method. This technique has an advantage that refractory materials can be vapour-deposited at relatively low temperatures,... 

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