Physical Properties of Surface Silicides

This Datareview has described the known surface phases which exist on both a- and P-SiC. Surface treatments by annealing in UHV, by ion bombardment and by laser irradiation are not suitable to prepare SiC surfaces for further study. Chemical reduction of surface oxides is the preferred route to surface preparation, particularly using a Si flux at temperatures < 1000°C. A distinction is drawn between ideal surfaces prepared in UHV and practical ones where substrates are chemically treated or ion bombarded prior to metallisation. Processes occurring during deposition of the first few monolayers of metal and subsequent treatments are discussed in terms of chemical and physical properties. A total of 15 metal-SiC combinations are reviewed and discussed in terms of silicide and carbide formation. 

---