Phonon wavenumbers

Here at the expansion we have put nk = 1, and xk is taken in the step form Xk = x if ko < k < fcmax and yk = 0 for all other k that is, we believe that the exciton-phonon interaction is effective only in the region between phonon wavenumbers k0 = 50 cm-1 and fcmaT = 200 cm-1. Note that we have also made an extrapolation of the function Kk, expression (359), from large values of k to small values. 

Phonon wavenumbers v, frequencies v, energies phon at symmetry points, given in cm , THz, and eV, respectively. 

Table 4.1-9 Phonon frequencies at symmetry points. Diamond (C) (v in THz, 300 K, from Raman spectroscopy) silicon (Si) (v in THz, 296 K, from inelastic neutron scattering) germanium (Ge) (v in THz, 300 K, from coherent inelastic nentron scattering) gray tin (a-Sn) (v in THz, 90 K, from inelastic thermal neutron scattering) silicon carbide (3C-SiC) (phonon wavenumbers v in cm , RT, from Raman spectroscopy) silicon carbide (6H-SiC) (v in THz, derived from photoluminescence data)...

Table 4.1-32 Phonon wavenumbers/frequencies of boron compounds. Values for hexagonal boron nitride (BNhex) obtained from infrared reflectivity values for boron phosphide (BP) from ab initio pseudopotential calculations...

Table 4.1-43 Phonon wavenumbers of aluminium compounds aluminium nitride (300 K, from Raman scattering) aluminium Phosphide (from Raman spectroscopy) aluminium arsenide (from Raman spectroscopy 0.5 p.m layer of AlAs on GaAs T = 31K) aluminium antimonide (from Raman spectroscopy)...

Table 4.1-59 Phonon wavenumbers of gallium compounds. Gallium nitride (GaN), T = 300K, from Raman spectroscopy gallium phosphide (GaP), RT, from an analysis of Raman, neutron, luminescence, and absorption data gallium arsenide (GaAs), T = 296 K, from coherent inelastic neutron scattering gallium antimonide (GaSb), T = 300 K, from second-order Raman effect...

Table 4.1-80 Phonon wavenumbers of indium compouuds. Indium nitride (InN), T = 300 K indium phosphide (InP), RT, from coherent inelastic neutron scattering, carrier concentration n = 10 em indium arsenide (InAs), from Raman scattering indium antimonide (InSb), T = 300 K, from inelastic neutron scattering, carrier concentration n = SxlO cm ...

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