Phase Description and Properties

Beta-gallium oxide is a wide-band gap semiconductor ( g = 4.9 eV) that exhibits promising properties for a range of optical and electronic applications. The wide gap leads to transparent semiconductors for optical windows into deep UV-wavelengths near 280 nm [65,166]. The conductivity can be varied from insulating to conducting, depending on the preparation conditions and the presence of various dopants [167]. 

P-Ga203 Stable phase under ambient p,T conditions p-Ga 03 melting point 1795 15°C 

By doping Ga203 with Sn, high conductivities of up to 8.2 S cm can be reached [168]. doping into P-Ga203 nanowires produced by deposition from the vapor phase results in visible cathodoluminescence, that may be partly due to Er3GasOi2 garnet particles in the nanoscale ceramics [169]. 

Ga203 is also being considered for use in high-temperature chemical gas sensors [68], as a magnetic memory material [170], and for dielectric thin films [171]. Recently, considerable effort has been devoted to the study of low-dimensional Ga203 

The structures of the other metastable polymorphs in the Ga203 system have not yet been fully characterized. The y-Ga203 phase is particularly problematic. It was first reported by Bbhm [182] as a result of the rapid drying of a gel and heating to 

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