Pentacene on Silicon Oxide

Pentacene is attracting considerable attention as its charge transport properties are excellent [4, 48], and films of pentacene on silicon oxide are commonly used for thin film transistors in which the silicon oxide serves as gate dielectric. 

4 the X-ray reflectivity shows modulations not only at the anti-Bragg condition, but also at all g -values other than the Bragg condition. These growth oscillations at different g -points correspond to the several Fourier components of the real-space sfructure. Therefore, it is advantageous to measure the reflectivity in a wide g-space region (0.25-0.8 A in this case) to get a precise measurement of the real-space sfructure and the film roughness [62]. 

where the interlayer transport of pentacene molecules could be quantified. While the exact nature of this transition is unknown, several factors may contribute such as decreased interlayer transport (increasing Schwoebel barrier), faster nucleation, and decreased difflisivity on top of islands. 

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