Parallel domain writing

In this chapter we report about the use of multiple afm tip array for parallel domain writing in bulk fe crystals. Fabrication of nanodomain gratings is based on direct writing of nanodomains with small ratio r/l < 10 - - 10 It is shown that the only mechanism providing such a low ratio is the fdb effect [13-15]. 

The intersection of the domain G and any straight line passing through a point x and in parallel to the axis Oxa consists of the interval Aa(a j). The endpoints of this interval are called boundary nodes in the a a-direction. A set of all boundary nodes in the -direction is designated by ya. The boundary yh of the grid uih is just the union yh = y1 U y2, making it possible to write down uih = uh U yh. ... 

It follows from the above discussion that Ha tends to expand the domains. The bit diameter will decreases with decreasing Ha and the smallest bit diameters (D) may be obtained when the write bias is applied parallel to the demagnetizing field (Ha< 0). Experimental data reported by Matsushita et al. (1975) are reproduced in fig. 71 for Gd0.2iCoo.79. The smallest stable domains (2.5 jam) were obtained at... 

A, T where x is a reduced temperature and v a scaling exponent. By including the constant, t difficulties are avoided, most obviously for the case when t 0. Along the temperature coordinate that issue is often avoided by choosing t(°C) and setting =273.2, i.e. assuming that it is T/K which properly scales temperature. In the pressure domain we write, similarly (should the field variable lie parallel to p), = A [ (p p - p )/(p + p ) ] = A, n ... 

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