P resistivity

For flat samples such as press cured slabs the resistivity may be computed from the foUowiag formula where p = resistivity, R = resistance, A = area of the sample (the effective area of the smaller electrode if two electrodes of different sizes ate used), and t = thickness of the sample. 

For wire iasulation, the relationship between the resistance of the sample and the resistivity of the iasulation material is expressed by the foUowiag equatisead oa, where R = resistance, p = resistivity, L = length of the sample, = radius of the conductor, and = radius of the iasulation. 

Sandor, P., Resistance to Intercrystalline Corrosion in Stainless Steel Weld Metal , Anticorros. 

Abbreviations and symbols denote ZNT ZN Technology Inc. (formerly Eagle Pitcher), Brea, USA Cl Cermet Inc., Atlanta, USA ML Mineral Ltd., Alexandrov, Russia TDC Tokyo Denpa Co., Tokyo, Japan s-CVT seeded chemical vapor transport PM pressurized melt HT hydrothermal T growth temperature P growth pressure d dimension p resistivity Nb,a - donor or acceptor concentration p Hall mobility Nas dislocation density... 

RF = resistance of filter medium to passage of liquid R p = resistance of filter medium to passage of air Rh = hydraulic radius, ft... 

Turnidge J, Collignon P. Resistance to fusidic acid. Int J Antimicrob Agents 1999 12(Suppl 2) S35-44. 

Ge/Si nanostructures were formed by molecular beam epitaxy. A buffer layer with 150 n m t hickness was g rown o n S i su bstrate d oped b y P (resistivity 5 2/cm ) a t 600°C. 4, 8 or 10 monolayers were grown with Ge nanoclusters covered by Si layer with the thickness of 150 inn. The samples were then irradiated by ruby laser beam with the pulse duration of 80 ns. Inhomogeneity of energy distribution in the laser spot (6 mm in diameter) did not exceed 5%. Energy density in a pulse was about... 

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