Oxygen on semiconductors

So far, we have focused our attention on adsorption of donor particles on semiconductor oxides. As for the effect of adsorption of acceptor particles on electrophysical characteristics, in concurrence with conclusions made none of adsorption phenomenon involving such characteristic acceptor particles as molecular and atom oxygen on -semiconductor, atoms of nitrogen and simplest alkyl and amine radicals brought about a non-monotonous change in characteristics of adsorbents, despite the fact that experiments had been conducted at various conditions. 

The validity of above expression has been proved in this study by the example of chemisorbtion of methyl radicals. They have been produced by means of photolysis of acetone vapour. It should be noted that the deduced expression is identical to that describing adsorption of molecular oxygen on semiconductor, i. e. cr = const / [19]. For ex-... 

This type of rate law frequently describes the adsorption of oxygen on semiconductor surfaces and gives straight-line plots of current versus logarithm of time. 

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