Oxygen depth profile

Oxygen Depth Profile. When coal samples of different particle size (400 mesh to 35 mesh) which had not been exposed to air after grinding were analyzed for the oxygen to carbon ratio, it was essentially the same for all sizes. This implies that the oxygen to carbon ratio is constant throughout the particle. When the same analysis was carried out for coal exposed to air for two months, there was a definite increase in the oxygen to carbon... 

Y. Watanahe, Effects of annealing on oxygen depth profiles and chemical etching rates of thermally grown silicon oxides, J. Electrochem. Soc. 145(4), 1306, 1998. 

FIGURE 5 Oxygen depth profiles for polyethylene implanted with 100-keV Sb" to different doses. 

It should be noted that during the implantation of low-energy ions (e.g., 100-keV B ) in polyethylene, polyamide, and some other polymers, the carbon enrichment turns out to be maximal at some depth below the surface of the irradiated target, which is evidenced by the depth profile of carbon excess in the implanted layer reconstructed from RBS spectra. In this case the oxygen depth profile is, generally, saddle shaped, because the additional maximum of oxygen concentration... 

FIGURE 6 Oxygen depth profile for polyethylene implanted with 5 x 10 B /cm at 100 keV. The nuclear stopping power depth distribution csJculated by means of the TRIM code is shown for comparison. 

Figure 18. Quantitative oxygen depth profiles in pure (A) and contaminated (B) molybdenum disulfide coatings. a.s recorded by nuclear reaction analysis.

Fig. 42. AES depth profiles of copper and sulfur (top) and zinc and oxygen (bottom) for the brass-on-glass adhesion specimens as a function of curing temperature. Reproduced by permission of Gordon and Breach Science Publishers from Ref. [46].

Fig. 12. Auger electron spectroscopy (AES) sputter-depth profile of CAA-treated titanium after various exposure.s in vacuum (a) as anodized, (b) 450°C for 1 h, and (c) 7(X)°C for 1 h. The sputter etch rate is 1.5 nm/min. The line indicates the original interface. The arrow denotes oxygen diffused into the substrate. Adapted from Ref. [51].

Fig. 10-20 Observed depth profiles of (a) phosphate, (b) dissolved inorganic carbon (TC), (c) alkalinity (TA), and (d) oxygen for the Atlantic, the Indian, and the Pacific Oceans as indicated. Data are from GEOSECS stations within 5° of the Equator in each ocean. (Modified from Baes et al. (1985).)...

Fig. 21—AES depth profiles of the TiN coatings (a and b) and the TiN/Si3N4 coating with optimum Si content of 10.8 at. % and hardness of 47.1 GPa (c and d) annealed at the temperature of 600 or 800°C in ambient atmosphere. The oxidation depth of the coatings is the sputtering depth where the oxygen atomic percentage reaches the minimum level.

Depth profiles of conversion for varying concentrations of photoinitiator (PI) are shown in the diagram, the concentrations of UYA and HALS have been kept constant. It is evident that lower PI concentrations are accompanied by oxygen inhibition at the coating surface and less bulk conversion. 

FIGURE 6.10 Comparison of SIMS depth profiles of relative oxygen concentration on the nontreated and oxygen plasma-treated ITO surfaces. 

S. Honda, A. Tsujimoto, M. Watamori, and K. Oura, Depth profiling of oxygen concentration of indium tin oxide films fabricated by reactive sputtering, Jpn. J. Appl. Phys., 33 L1257-L1260, 1994. 

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