Organic MIS Capacitors

1 Quasi-Static CVCurves for a Capacitor with Arylamino-PPV 

At first an example will be considered from an early systematic investigation [2] of hysteresis in organic field-effect devices. The quasi-static CV curves of 

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In Section 16.4 we come back to hysteresis effects by trap recharging. We have shown in Ref [10] that this mechanism can lead to hysteresis in quasistatic CF-curves of organic MIS capacitors. However, the form of the curves was qualitatively different from the observed ones. This analysis is extended... 

Figure 16.4 Dynamic capacitance-voltage curves of an organic MIS capacitor measured at 1 Hz for different gate-bulk voltage (V(3b) sweep directions at different temperatures. The organic semiconductor is a 48 nm thick poly(3-octylthiophene)...

Figure 16.5 Dynamic CV curves of organic MIS capacitors measured at 10 Hz for different gate-bulk voltage (Fob) sweep directions at room temperature. The organic semiconductors are P30T purified P3HT, and pentacene prepared by a precursor route.

Hysteresis effects usually occur in organic field-effect transistors (OFET) or MIS capacitors [1-4], A detailed literature survey will be given in Section 16.2. In spite of the large number of publications, systematic investigations of the hysteresis effects are rare. Examples are discussed e.g. in Ref [5]. 

Figure 16.3 Measured quasi static CV curves of a MIS capacitor for different V g sweep directions at given ramp rate and different temperatures (a) and at room temperature for different ramp rates (b). The organic semiconductor is a 54 nm thick arylamino-PPV layer, the silicon dioxide insulator is 40 nm. Data from [2],...

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