Optimised Sub-micron OFETs

As already shown in the previous section, short channel effects such as lack of saturation can be avoided by a sufficiently thin gate insulator and improved charge injection could be realised by a thinner titanium adhesion layer. Never- 

Obviously, the charge-carrier mobility in air raises with an increasing number of thiophene units almost two orders of magnitude, ranging from 5 x 10 (DH4T) to 10-1 (DH7T) cmWs. 

A similar trend was reported for unsubstituted oligothiophenes [48]. The highest measured mobility was 0.12 cmWs for DFI7T in the linear regime [22, 40]. 

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