Nonoxide ceramics aluminum nitride

Included in the term nonoxide ceramics are all non-electrically conducting materials in the boron-carbon-silicon-aluminum system. The industrially most important representatives, apart from carbon (see Section 5.7.4), are silicon carbide (SiC), silicon nitride (Si3N4), boron carbide (B4C), boron nitride (BN) and aluminum nitride (AIN). 

Aluminum nitride is a nonoxide ceramic material. The GTE of AIN (4.5 ppm/°C) is substantially lower than that of alumina. Early attempts to use thick-film dielectric materials designed for alumina substrates on AIN were unsuccessful. Many of the glasses used in thick-film formulations designed for alumina substrates are chemically incompatible with AIN. Furthermore, the CTE differences between dielectrics designed for alumina and AIN substrates lead to cracking. Special thick-fihn dielectric formulations have been developed for use on AIN substrates. Table 8.12 shows properties of a typical thick-fihn dielectric on AIN substrates. " ... 

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