Neutralization of defects

Contrary to the case of shallow impurities, the interaction between deep level defects and hydrogen has been the subject of a few detailed studies. The reasons for that can be found in the lack of detailed understanding of the defect itself involved in the interaction. In some cases, these defects are still the subject of studies with sometimes controversial interpretations. Moreover, the concentration of deep level defects involved in the hydrogen complexes is relatively low, which makes experimental investigations for local structure analysis very difficult. In this section, we present the set of data establishing the neutralization of defects or deep impurities by hydrogen. 

J. Chevalier, B. Clerjaud, and B. Pajot, Neutralization of Defects and Dopants in III-V Semiconductors... 

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