MOVPE technique

For ZnO growth, OMVPE/MOVPE technique typically involves the use of metal alkyls, usually dimethyl zinc (CH3)2Zn (DMZn) or diethyl zinc (C2Hs)2Zn (DEZn) in combination with a separate source of oxygen and argon or nitrogen as a carrier gas. 

There are reports [24,25] that it is possible to decrease the MOVPE growth temperature to 550°C by using the nitridated surface of sapphire without the subsequent buffer layer. Tokuda et al [24] reported the GaN 00.2 FWHM dependence on the nitridation time of sapphire at 940°C in a plasma-excited N2 atmosphere. Using this technique, the best MOVPE GaN layers of FWHM less than 20 arc min were grown on a surface nitridated for 10 - 20 min. In a similar experiment, Kim et al [25] obtained GaN of the best 00.2 FWHM of 0.4 degrees for 10 min nitridation time. 

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