Models of the Schottky barrier

The barrier is characterized by the barrier height, O3, the built-in potential V, and the depletion layer width. An ideal Schottky contact has a barrier height and built-in potential given by, 

The model predicts that the barrier height is independent of the doping, but that the built-in potential varies. 

The potential of the depletion layer V(x) is the solution of Poisson s equation 

The space charge, p(x), arises from the ionization of band gap states which are raised above the equilibrium Fermi energy by the band bending. The charge density is related to the density of states distribution by 

4) is a low temperature approximation but is easily modified to include the Fermi distribution of the electrons. 

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