MOCVD deposition

MOCVD of Zirconia. Yttria-stabilized zirconia is also deposited by MOCVD.Deposition can be accomplished by the codecomposition of the tetramethyl heptadiones of zirconium and yttrium, Zr(CjjHj902)3 and Y(CjjHj902)3, at 735°C. Deposition is also achieved by the decomposition of the trifluoro-acetylacetonates in a helium atmosphere above 300°C.P 1 Other potential MOCVD precursors are bis(cyclopentadienyl)zirconium dichloride, (C5H5)2ZrCl2, and zirconium (IV) trifluoroacetylacetonate,... 

CdS Plasma- enhanced MOCVD Deposition temperature lowered by 200 °C, polycrystalline film of hexagonal phase, contaminated with carbon when grown below 250 °C 184... 

Concerning the application of gallium alkoxides, one can mention the selective catalytic activity of Ga(OPh)3in the condensation reactions of isobutene with phenols. In(OR)3 is used for the preparation of solutions for production of ln203 and In2Oj-related conduction films [1618] and also in the synthesis of volatile precursors for MOCVD deposition of In2Oj [830]. 

The groups of Rhee and Jun synthesized La(thd)3(tetea) (24) and La(thd)3-(tetraglyme) (25), which show an increased solubihty compared to La(thd)3, for use as precursors in direct liquid injection MOCVD. Deposition on Si(lOO) between 325 and 450 °C using argon as carrier gas along with oxygen as reactive gas lead to smooth dense... 

Sakashita, Y., Ono, T., Segawa, H., Tominaga, K., and Okada, M., Preparation and electrical properties of MOCVD-deposited PZT thin films, J. Appl. Phys., 69, 8352 (1991). 

MOCVD deposited CdTe film on biaxial buffer Cap2 on amorphous substrates... 

MetallorganicMBE (MOMBE). tire solid source Knudsen cells in conventional MBE are replaced witli gaseous beams of organometallic precursors, directed toward a heated substrate in UHV. Compared to MOCVD, MOMBE eliminates gas phase reactions tliat may complicate tire deposition surface reactions, and provides lower growtli temperatures. 

MOCVD. See Metal organic chemical vapor deposition. 

LPE = liquid-phase epitaxy, MOCVD = metalorganic chemical vapor deposition, VPE = vapor-phase epitaxy. 

Epitaxial crystal growth methods such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) have advanced to the point that active regions of essentially arbitrary thicknesses can be prepared (see Thin films, film deposition techniques). Most semiconductors used for lasers are cubic crystals where the lattice constant, the dimension of the cube, is equal to two atomic plane distances. When the thickness of this layer is reduced to dimensions on the order of 0.01 )J.m, between 20 and 30 atomic plane distances, quantum mechanics is needed for an accurate description of the confined carrier energies (11). Such layers are called quantum wells and the lasers containing such layers in their active regions are known as quantum well lasers (12). 

This article focuses primarily on the properties of the most extensively studied III—V and II—VI compound semiconductors and is presented in five sections (/) a brief summary of the physical (mechanical and electrical) properties of the 2incblende cubic semiconductors (2) a description of the metal organic chemical vapor deposition (MOCVD) process. MOCVD is the preferred technology for the commercial growth of most heteroepitaxial semiconductor material (J) the physics and (4) apphcations of electronic and photonic devices and (5) the fabrication process technology in use to create both electronic and photonic devices and circuits. 

CVD reactions are most often produced at ambient pressure in a freely flowing system. The gas flow, mixing, and stratification in the reactor chamber can be important to the deposition process. CVD can also be performed at low pressures (LPCVD) and in ultrahigh vacuum (UHVCVD) where the gas flow is molecular. The gas flow in a CVD reactor is very sensitive to reactor design, fixturing, substrate geometry, and the number of substrates in the reactor, ie, reactor loading. Flow uniformity is a particulady important deposition parameter in VPE and MOCVD. 

Dimethylcadmium has found use as a volatile source of Cd for metal organic chemical vapor deposition (MOCVD) production of cadmium-containing semiconductor thin films (qv) such as CdS, Cdi 2 Hg -Te, or Cdi 2 Mn -Te, as multiple quantum weU species (32). Semiconductor-grade material seUs for... 

The alkoxides and aryloxides, particularly of yttrium have excited recent interest. This is because of their potential use in the production of electronic and ceramic materials,in particular high temperature superconductors, by the deposition of pure oxides (metallo-organic chemical vapour deposition, MOCVD). They are moisture sensitive but mostly polymeric and involatile and so attempts have been made to inhibit polymerization and produce the required volatility by using bulky alkoxide ligands. M(OR)3, R = 2,6-di-terr-butyl-4-methylphenoxide, are indeed 3-coordinate (pyramidal) monomers but still not sufficiently volatile. More success has been achieved with fluorinated alkoxides, prepared by reacting the parent alcohols with the metal tris-(bis-trimethylsilylamides) ... 

Metallo-organic CVD (MOCVD) and plasma CVD are developing rapidly, not only in the semiconductor-microelectronic area but also in hard coatingsfor erosion andwearapplicationssincethelower deposition temperature now permits the use of a broader spectrum of substrates. Special emphasis hasbeen given to these two areas in this second edition of the CVD Handbook (see Ch. 4 and 5). 

Metallo-organic CVD (MOCVD) is a specialized area of CVD, which is a relatively newcomer, as its first reported use was in the 1960s for the deposition of indium phosphide and indium anti-monide. These early experiments demonstrated that deposition of critical semiconductor materials could be obtained at lower temperature than conventional thermal CVD and that epitaxial growth could be successfully achieved. The quality and complexity of the equipment and the diversity and purity of the precursor chemicals have steadily improved since then and MOCVD is now used on a large scale, particularly in semiconductor and opto-electronic applications.91P1... 

Metallo-organics are compounds in which the atom of an element is bound to one or more carbon atoms of an organic hydrocarbon group. Many of the elements used in MOCVD are the metals of groups Ila, Ilb, Illb, IVb, Vb, and VIb, which are non-transitional. The metallo-organics thus complement the halides and carbonyls, which are the precursors for the deposition of transition metals (Groups IVa, Va, and Via) and their compounds. 

Most metals can be deposited by MOCVD and in some cases the process is an important industrial operation. The metals most readily deposited by MOCVD are the non-transition metals. The following is a summary of the metallo-organic precursors and deposition condition presently used in development or production. 

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