Microhotplate with MOS-Transistor Heater

After the deposition of the passivation, the contact electrodes for the resistive measurements have to be opened (Fig. 4.14f). The respective nitride etching was done in a reactive-ion etcher under SFe atmosphere. 

The membrane release and the deposition of the sensitive layer are identical with the process described in Sect. 4.1.2. 

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Fig.4.17. Cross-section of a microhotplate with integrated MOS-transistor heater, D and S denote drain and soiu ce of the transistor...

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