MICROELECTRONICS PROCESSING: INORGANIC MATERIALS CHARACTERIZATION

Houskova, J. Ho, K. Balazs, M. K. In Microelectronics Processing Inorganic Materials Characterization Casper, L. A., Ed. ACS Symposium Series 295 American Chemical Society Washington, DC, 1986 pp 320-332. 

Figure 3-8 Raman microprobe spectrum of fluorinated hydrocarbon contaminant on silicon wafer that had been polished and plasma-etched (lower) and Raman spectrum of polytetrafluoro-ethylene (upper). Laser, 135 mW at 514.5 nm. Slits, 300 jon. Time, 0.5 s per data point. (Reproduced with permission from Adar, F., in Microelectronics Processing Inorganic Materials Characterization (L. A. Casper, ed.), ACS Symposium Series Vol. 295, pp. 230-239. American Chemical Society, Washington, D.C., 1986. Copyright 1986 American Chemical Society.)...

In Microelectronics Processing Inorganic Materials Characterization Casper, L. ... 

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