Metal organic chemical vapour deposition MOCVD

Singh HB, Sudha N (1996) OrganoteUurium precursors for metal organic chemical vapour deposition (MOCVD) of mercury cadmium telluride (MCT). Polyhedron 15(5-6), 745-763... 

The assumption of equilibrium which is implicit in EQN (1) is expected to be satisfied at the high temperatures at which metal-organic chemical vapour deposition (MOCVD) growth of nitrides is carried out. At lower temperatures, such as those used in molecular-beam epitaxy (MBE), deviations from equilibrium may occur. 

Ce(R CO.CH.CO.R )3 are readily oxidized (O2) to Ce(R CO.CH.CO.R )4, such as Ce(acac)4(R = R = Me), Ce(dbm)4(R = R = Ph), and Ce(tmhd)4 (R = R = Mc3C), generally found to have square antiprismatic structures, though Ce(tmhd)4 is closer to dodecahedral. These are volatile dark red solids that are soluble in solvents such as benzene and chloroform they are volatile, with vapour pressures high enough for Metal Organic Chemical Vapour Deposition (MOCVD) use, whilst they have also been studied as possible alternatives to lead compounds for petrol additives. 

Some years ago the thermolysis of organopnictogens was considered an esoteric subject of limited interest. The topic has been transformed into one of the growth points of hetero-organic chemistry because of the enormous economic potential of metal organic chemical vapour deposition (MOCVD) processes for the production of III-V type of... 

The bis-Cp titanium bis(/-butanethiolato) and bis(ethanethiolato) complexes have been used as a single-source precursors for the preparation of thin films of titanium sulfides by metal-organic chemical vapour deposition (MOCVD). The crystal and molecular structures of the precursor complexes have been determined for comparison with homologous complexes of the general formula Cp2Ti(SR)2.1618... 

A few compounds have been studied for other reasons. These include trimethylaluminium [64] and trimethylgallium [65] which are of interest because of their use in metal organic chemical vapour deposition (MOCVD) processes. The compounds were also studied because the interactions between methyl groups in the same molecule are a continuing source of fascination. Tetramethyltin was studied for the same reason [66]. 

Chemical vapour deposition (CVD) is the delivery (by uniform mass transport) of a volatile precursor or precursors to a heated surface on which reaction takes place to deposit a thin film of the solid product the surface must be hot enough to permit reaction but cool enough to allow solid deposition. Multilayer deposition is also possible. Metal-organic chemical vapour deposition (MOCVD) refers specifically to use of metal-organic precursors. 

Metal-organic chemical vapour deposition (MOCVD) refers specifically to use of metal-organic precursors. 

III-V nitrides (InN, GaN and AIN) are made by CVD using (CH3)3M (M=In, Ga and Al) and NH3 as precursors [6]. HgCdTe, which is used in infrar (IR) detectors, is made by the reaction of the dimethyl derivatives of the metals [7]. PbSnTe is also synthesized by CVD [8]. High-quality thin films of superconducting YBa CUjO,. have been prepared by metal organic chemical vapour deposition (MOCVD) techniques using p-diketonate derivatives of Y, Ba and Cu as precursors [9]. 

Yan et al. (1994) prepared thin Pd membranes using the metal-organic chemical vapour deposition (MOCVD) method in the macropores of an a-alumina support tube. The best Pd membrane was obtained under a pressure of 100-120 Pa inside the reactor and a heating rate of 10°C/min, at 300°C. The H2 permeability was equivalent to that of the membrane prepared by Uemiya et al. (1991d), and the selectivity was higher than 1000 at a permeation temperature of 100-300°C. The H2 permeability was proportional to the first order of the H2 partial pressure, suggesting that the diffusion of dissolved H2 was not rate-determining. H2 embrittlement was restrained at a temperature as low as 100°C, and the membrane was resistant to abrasion in spite of its thinness. 

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