Metal insulator-semiconductor

MISFET. See Metal insulator semiconductor field-effect transistor. 

Four different types of junctions can be used to separate the charge carriers in solar cebs (/) a homojunction joins semiconductor materials of the same substance, eg, the homojunction of a p—n sibcon solar ceb separates two oppositely doped layers of sibcon 2) a heterojunction is formed between two dissimbar semiconductor substances, eg, copper sulfide, Cu S, and cadmium sulfide, CdS, in Cu S—CdS solar cebs (J) a Schottky junction is formed when a metal and semiconductor material are joined and (4) in a metal—insulator—semiconductor junction (MIS), a thin insulator layer, generaby less than 0.003-p.m thick, is sandwiched between a metal and semiconductor material. 

Interface states played a key role in the development of transistors. The initial experiments at Bell Laboratories were on metal/insulator/semiconductor (MIS) stmctures in which the intent was to modulate the conductance of a germanium layer by applying a voltage to the metal plate. However, only - 10% of the induced charges were effective in charging the conductance (3). It was proposed (2) that the ineffective induced charges were trapped in surface states. Subsequent experiments on surface states led to the discovery of the point-contact transistor in 1948 (4). 

Contacts are the elementary building blocks for all electronic devices. These include interfaces between semiconductors of different doping type (homojunctions) or of different composition (heterojunctions), and junctions between a metal and a semiconductor, which can be either rectifying (Schotlky junction) or ohmic. Because of their primary importance, the physics of semiconductor junctions is largely dealt with in numerous textbooks [11, 12]. We shall concentrate here on basic aspects of the metal-semiconductor (MS) and, above all, metal-insulator-semiconductor (MIS) junctions, which arc involved in the oiganic field-effect transistors. 

The concept of light addressable potentiometric sensors (LAPS) was introduced in 1988 [67], LAPS is a semiconductor-based sensor with either electrolyte-insulator-semiconductor (EIS) or metal-insulator-semiconductor (MIS) structure, respectively. Figure 4.13 illustrates a schematic representation of a typical LAPS with EIS structure. A semiconductor substrate (silicone) is covered with an insulator (Si02). A sensing ion-selective layer, for instance, pH-sensitive S3N4, is deposited on top of the insulator. The whole assembly is placed in contact with the sample solution. 

P. Estrela, P. Migliorato, H. Takiguchi, H. Fukushima, and S. Nebashi, Electrical detection of biomolecular interactions with metal-insulator-semiconductor diodes. Biosens. Bioelectron. 20, 1580-1586 (2005). 

Salomonsson, A., Eriksson, M. and Dannetun, H., Hydrogen interaction with platinum and palladium metal-insulator-semiconductor devices, Journal of Applied Physics, 98,014505,2005. 

Huang LJ, Rajesh K, Lau WM, Ingrey S, Landheer D, Noel JP, Lu Z (1995) Interfacial properties of metal-insulator-semiconductor capacitors on GaAs(llO). J Vac Sci Technol A 13 792-796... 

Fig. 11. The time dependence of the threshold voltage shift for a 20 V bias applied to an a-Si H based metal-insulator-semiconductor device for various temperatures (Jackson et al., 1989a).

W.F.H. Micklethwaite, The Crystal Growth of Cadmium Mercury Telluride Paul E. Petersen, Auger Recombination in Mercury Cadmium Telluride R.M. Broudy and V.J. Mazurczyck, (HgCd)Te Photoconductive Detectors M.B. Reine, A.K. Sood, and T.J. Tredwell, Photovoltaic Infrared Detectors M.A. Kinch, Metal-Insulator-Semiconductor Infrared Detectors... 

Dawar, A. L. Kumar, A. Kumar, P. Mathur, P C. 1984. Field-effect studies on p-type CuInTe2 metal-insulator-semiconductor structures. I. Appl. Phys. 

Lin, H. C. Ye, P. D. Xuan, Y. Lu, G. Facchetti, A. Marks T. J. 2006. High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodiclcctrics. Appl.. Phys. Lett. 89 142101/1-142101/3. 

Phosphorus oxynitride, PON, is a useful starting product, as a phosphorus and nitrogen source, to prepare various nitridooxophos-phates, in particular phosphorus oxynitride glass compositions (211). Moreover, it shows as a material excellent chemical stability with potential applications in several domains. In microelectronics, for example, PON has been used to form by evaporation insulating films for the passivation of III-V InP substrates and the elaboration of MIS (metal-insulator-semiconductor) structures (190, 212-215). PON could have also valuable properties in flame retardancy (176,191,216). 

A3B5 -type semiconductors, especially GaAs75 have always been of great interest. These materials have unique electrical and optical properties, but there are some difficulties with technology. In particular, insulating layer fabrication on the surface of such semiconductors and, therefore, creation of metal-insulator-semiconductor (MIS) structures based on them is still a problem, but LB technology might represent a solution.68,75... 

Metal inert gas (MIG) welding, 27 369 Metal-insulator-semiconductor (MIS) capacitor, 29 140-143 Metal-insulator-semiconductor devices, 22 191, 192... 

MISFETs), 22 162, 192. See also Field effect transistors (FETs) Metal-insulator-semiconductor junction, 23 34... 

A Schottky diode is always operated under depletion conditions flat-band condition would involve giant currents. A Schottky diode, therefore, models the silicon electrolyte interface only accurately as long as the charge transfer is limited by the electrode. If the charge transfer becomes reaction-limited or diffusion-limited, the electrode may as well be under accumulation or inversion. The solid-state equivalent would now be a metal-insulator-semiconductor (MIS) structure. However, the I-V characteristic of a real silicon-electrolyte interface may exhibit features unlike any solid-state device, as... 

Polymers and Their Application in Photogalvanic Metal-Insulator- Semiconductor Structures. 

The success of CD CdS in photovoltaic cells has driven related research with potential applications in other semiconductor devices. Since the CD process seems to play a role in the favorable properties of the CdS windows by decreasing interface recombination, studies of its passivation properties on other interfaces and surfaces have been carried out, with considerable success. For example, when a very thin film (ca. 6 nm) was deposited between InP and SiOi, the resulting reduction of the interface state density led to improved electrical properties of metal-insulator-semiconductor capacitors and field effect transistors (FETs)... 

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