Metal energy band bending

Fig. 5.1 Schematic energy band bending for (A) large particle, (B) small particle, and (C) metal-deposited particle. R, radius of the particle Lsc, space charge layer E(red/ox), redox level in solution E , Fermi level in semiconductor

Figure 17.6 Numerical calculation of energy band bending across a metal/silicon nanowire Schottky barrier, a system that bears similarity to surface charging due to chemisorption. The calculation is for a nanowire of n-type doping density at lO cm and diameter equal to...

Figure 12.6 Plot showing the formation of semiconductor surface band bending when a semiconductor contacts a metal (Ec, the bottom of conduction band Ev, the top of valence band EF, the fermi energy level SC, semiconductor M, metal Vs, the surface barrier). (From Liqiang, J. et al., Solar Energy Mater. Solar Cells, 79, 133, 2003.)...

Fig. 2.3. Schematic view of a porous nanocrystaUine sensing layer with a one-dimensional representation of the energetic conduction band. A inter-grain band bending, eVs, occms as a consequence of smTace phenomena, and a band bending, eVc, occurs at the grain-electrode contact. Eb denotes the minimmn conduction band energy in the bulk tin oxide, and Ep is the Fermi-energy in the electrode metal...

Fig. 4.11 Energy band diagrams for metal-loaded Ti02 particles (photocatalyst). (A) The metal acts as a catalyst for a reductive reaction such as hydrogen evolution under weak band bending. (B) The metal acts as a catalyst for an oxidative reaction such as oxygen evolution under strong band bending.

Flat-band potential — In the energy barrier formed for example at metal-semiconductor junctions (- Schottky barrier), metal-insulator-semiconductor junctions, and solution-semiconductor interfaces the flat-band potential corresponds to the potential at which the electric field equals zero at the semiconductor interface, i.e., there is no -+ band bending. In case of solution-semiconductor interfaces, the flat-band potential corresponds to the condition of absence of excess charge and consequently, depletion layer, in the semiconductor. See also -> Mott-Schottky plot, and -> semiconductor. 

---