Lattice defects continued

Despite continuing progress in the crystal growth, 3C-SiC films still contain many lattice defects. In particular, twins, stacking faults and antiphase boundaries (APBs) have been reported [64,65]. APBs occur as a common defect when a polar film, SiC in this case, is heteroepitaxially grown on a non-planar substrate. To eliminate this particular defect in 3C-SiC films, Si substrates misoriented from the (100) plane have been used, as stated above [39,53],... 

Spitzer and Fan (1958) and Fan and Ramdas (1959) observed an absorption band in silicon at 490 cm induced by irra ation. They ascribed it to the fundamental optical mode of Si made infrared active by the introduction of lattice defects. Tauc et aL (1970a) observed a band in amorphous Ge at 270 cm and interpreted it as disorder induced one-phonon absorption (Figure 4.2). Lurio and Brodsky (1972) studied the infrared spectra of a-Ge and Si and their results were interpreted by Alben etaL (1973). They used the continuous random network model and showed that for the understanding of the relative strengths of the infrared bands the transition matrix elements must be taken into account. 

It should be clear that the presence of line defects in a crystal lattice leads to a disruption of the continuity of the lattice just as the presence of point defects affects the packing of a given lattice. The line defect. 

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