Key Chemical Components in Metal CMP Slurries

Microelectronic Applications of Chemical Mechanical Planarization, Edited by Yuzhuo Li Copyright 2008 John Wiley Sons, Inc. 

A metal CMP process involves an electrochemical alteration of the metal surface and a mechanical removal of the modified film. More specifically, an oxidizer reacts with the metal surface to raise the oxidation state of the material, which may result in either the dissolution of the metal or the formation of a surface film that is more porous and can be removed more easily by the mechanical component of the process. The oxidizer, therefore, is one of the most important components of the CMP slurry. Electrochemical properties of the oxidizer and the metal involved can offer insights in terms of reaction tendency and products. For example, relative redox potentials and chemical composition of the modified surface film under thermodynamically equilibrium condition can be illustrated by a relevant Pourbaix diagram [1]. Because a CMP process rarely reaches a thermodynamically equilibrium state, many kinetic factors control the relative rates of the surface film formation and its removal. It is important to find the right balance between the formation of a modified film with the right property and the removal of such a film at the appropriate rate. 

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