Ion conduction and self-diffusion

41) and subsequently Eq. (6.42) were obtained from the conclusion that the absolute values of ion flux and of defect flux must be equal to each other (Tq - oc ]o2 /(f) (To OC joi M)- 

Determination of the defect diffusion coefficient (Dk) according to Eq. (6.42) requires knowledge of the defect concentration (ck). As can be seen from the above relationships, the temperature dependence of Dq2- is given by the temperature dependence of (7o2- and, in contrast to Dk and Uk, the enthalpy of defect formation is also included. 

Doping experiments, thermoelectric and Hall effect experiments provide powerful methods for separating the charge carrier concentration and mobility. 

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