Intervalley scattering

Is the intervalley scattering time on a GaAs surface faster or slower than that in bulk GaAs ... 

In the absorption spectrum of Bi, the 2po line at 59.4 meV is resonant with the SiZTO(S i) phonon at 59.1 meV. This phonon produces an intervalley scattering of the bound electron in a given CB valley into perpendicular valleys, leading to a resonant broadening of 2po(Bi), which can be shown in Fig. 6.3. This point is further discussed in Sect. 8.2.1.1. 

Near the band crossover x = 0.15), intervalley scattering has to be taken into account. 

Based on the success of both our calculations and those of Ref. 12 we conclude that the "rigid-pseudoion" model provides a good description of the EP and HP intervalley scattering matrix elements in Ge and Si. One of the questions to be resolved is the difference in the extrapolation of the form factor between our work and that of Ref. 13. This may be due to the empirical nature of the pseudopotential that has been used and suggests that a more self-consistent approach should be tried. Also the extension of the present work to zincblend-type materials is an area of considerable interest. 

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