Interfaces with dielectrics and semiconductors

100 A of material, so that the sharpness of the interface also implies that there is little roughness of the interface. 

More precise measurements of the abruptness of the interface are obtained from Raman spectroscopy and X-ray scattering. Some Raman spectra of a-Si H and a-Ge H multilayers are shown in Fig. 

These measurements are not, however, the complete story. Electron 

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There are several, relatively simple reasons for the dominance of silicon The band gap of 1.1 eV is just suitable for devices operating at temperatures encountered in the most applications (-40 to +50 °C). From the chemical point of view, silicon is the only semiconductor which forms a stable oxide with excellent dielectric properties. In spite of the incommensurability of their crystal lattices, an almost perfect interface with a low defect density of < 10 cm can be routinely prepared between silicon and... 

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