InGaN/GaN MQW LED

Fig. 3. Forward (top) and reverse (bottom) voltages of InGaN/GaN MQW LED with and without annealing after etching as a function of ICP source power.

Figure 12.34 Spectrally integrated EL intensity of fn-plane InGaN/GaN MQW LEDs as a function of polarization angle ]f = 400 A cm ). The angle of 0°...

The longer wavelength PL emission from the planar a-plane sample agreed with the higher In content, determined from the HRXRD analysis. The results showed that the In incorporation and hence the PL emission wavelength was considerably higher in defective material. The presence of surface defects with facets other than the (1120) orientation led to the increased In incorporation in the defective areas. Similar behavior was observed in the presence of the so-called V-defects in c-plane InGaN/GaN MQWs by Wu et al. [13]. However, the reasons for lower In incorporation efficiency in a-plane GaN compared with c-plane GaN are unclear. 

In 2003, Chen et al. reported 363-nm ultraviolet LED using nonpolar a-plane AlGaN/GaN MQWs [25]. In 2004, Chitnis etol. reported visible LED using nonpolar a-plane InGaN/GaN MQWs [26]. Till 2004, there were no reports on optical power performance of nonpolar light emitters. The lack of low-defect density templates or substrates for the growth of LEDs was probably... 

The purpose of this section of the chapter is to describe the growth, structural, electrical, and optical properties of nonpolar a-plane and m-plane LEDs using InGaN/GaN MQW structures grown by MOGVD. 

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