In Situ Methods II. Stationary Microwave Reflectivity

The excess conductivity of a semiconductor, Acr= ejj. i,fAn(p), due to the induced change in carrier concentration n(p) results in a corresponding change of the reflected microwave intensity APr. With the relative microwave reflectivity defined as 

For semiconductors with thickness d 1 mm, the microwave field ft can be considered as constant along the x-axis. Equation 2.40 then reduces to (with an according change of the sensitivity factor to S ) 

For further analysis, in particular regarding the signal from the majority carriers in n-Si where the electron mobility is about three times larger than that of the holes, the excess carrier profiles are considered separately in the space charge region 0 x W) and in the neutral region x W). 

The charge distribution for the semiconductor-electrolyte system is given by the excess minority carrier profile Ap(x) (2.40a) and the corresponding neutralizing majority carrier profile. The microwave signal due to the minority carriers, AR, is given by the excess carrier distribution throughout the sample  

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