In Situ CVD Growth of BSCCO

The first in situ growth of BSCCO by MOCVD was reported by Endo et al. at the Electrotechnical Laboratory [222]. In this and all further reports, these researchers employed Bi(ph)3, Sr(dpm)2, Ca(dpm)2, and Cu(dpm)2 as the volatile precursors. In situ growth was achieved by deposition under 50Torr total system pressure at 800 °C with oxygen as the reactant gas. A temperature dependence of in situ c-axis oriented phase formation was noted as follows (i) = 700°C gave Bi-2212 films (ii) = 

Researchers at the University of Tokyo have reported the low temperature in situ growth of superconducting BSCCO films by CVD [238]. Bi(ph)j, Sr(dpm)2, Ca(dpm)2, and Cu(dpm)2 precursors were employed with oxygen at a substrate temperature of 550 °C and a system pressure of 2Torr, thereby producing Bi-2212 films with 7]. = 65 K. In another report, Bi-2212 phase films were grown at a deposition temperature of 500°C by UV-photo-assisted CVD, however, no superconducting transition was noted down to 15 K [239]. 

---