Hydrogen termination native oxide

The formation of a chemical oxide in pure DI water was found to depend critically on the DOC of the water [Gr3, Mol, Li9]. In DI water of very low DOC (<0.004 ppm), no native oxide forms. Furthermore the reverse reaction is observed for elevated temperatures (80 °C) and long etching times (60 min) thin native or chemical oxides are removed and a hydrogen-terminated surface is established [Wa2]. 

Fig. 1 Comparison of the magnetization curves of bare n silicon (full line), as-etched porous silicon prepared from the same wafer (dotted line), and aged porous silicon offering a native oxide layer (dashed line). All three samples show a diamagnetic behavior, whereas the estimated susceptibility varies between —1.2 10 (Si), —7.5 10 (as-etched), and —2.6 10 (aged). The measurements have been performed at T = 4.2 K. The diamagnetic behavior of porous silicon decreases if the sample is oxidized (in contrast to hydrogen terminated) which might be caused by the occurrence of dangling bonds...

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