Hydrogen intensity modulated photocurrent

Intensity-modulated photocurrent spectroscopy has been used in combination with microwave reflectivity measurements to investigate hydrogen evolution at a p-type silicon45 and an n-type silicon.46 The measurement of amplitude and phase under harmonic generation of excess carriers, performed by Otaredian47 on silicon wafers in an attempt to separate bulk and surface recombination, should also be mentioned here. 

Schlichthorl G., Ponomarev E. A. and Peter L. M. (1995), An investigation of hydrogen evolntion at p-Si by intensity modulated photocurrent spectroscopy and photomodnlated microwave reflectivity , J. Electrochem. Soc. 142, 3062-3067. 

A comparison of this method with photoelectrochemical impedance spectroscopy" as applied to photoelectrochemical hydrogen evolution at p-lnP has been reported [728]. Intensity modulated photocurrent spectroscopy has been compared with intensity-modulated photo voltage spectroscopy (IMVS) [729]. Intensity modulated photocurrent spectroscopy has been applied in a study of the silicon dissolution in aqueous solutions of NH4F [730] and n-GaAs electrodes [731] a general review is available [732]. Photocorrosion of CdS has been investigated with IMPS and photoelectrochemical impedance spectroscopy (PEIS) [733] a mechanism could be de-... 

Light modulated microwave reflectivity has been used to characterise hydrogen evolution on oxide free />-Si at low light intensities [73]. The cathodic photocurrent reaches a plateau at potentials more negative than -0.5 V, and it can be shown that this corresponds to complete collection of photogenerated electrons at the junction (i.e. no recombination). This is confirmed by the set of IMPS plots in Fig. 23 which collapse to a point on the real axis as the potential becomes more negative. 

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