Hydrogen diffusion activation energy

The hydrogen diffusion activation energy increases with time because of the dispersive hydrogen motion. The relaxation of defects and dopants typically involves a much shorter hydrogen diffusion distance than in measurements of the diffusion coefficient, so that the activation energy of t is smaller than of Dg and is given by... 

The 1.5 eV diffusion activation energy, needed to release hydrogen from the Si—H bond into an interstitial site, is smaller than the... 

As the working temperature of the substrate was increased, the induction period (the delay time) of increased conductivity decreased due to increased rate of lateral diffusion of hydrogen atoms towards the sensor. The activation energy for surface migration of particles along a Si02 substrate estimated from the tilt of the Arrhenius plot was found to be about 20 kj/mol. 

By varying the temperature at which the experiments were conducted and the distance between the activator and the sensor, the data were obtained (Fig. 4.17) which allowed us to calculate the activation energy of migration of hydrogen adatoms (protium and deuterium) along the carrier surface and coefficients of lateral diffusion of hydrogen atoms appearing due to the spillover effect (see Table 4.2). 

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