Hole mobility Gaussian distribution

Figure 6 shows the field dependence of hole mobiUty for TAPC-doped bisphenol A polycarbonate at various temperatures (37). The mobilities decrease with increasing field at low fields. At high fields, a log oc relationship is observed. The experimental results can be reproduced by Monte Carlo simulation, shown by soHd lines in Figure 6. The model predicts that the high field mobiUty follows the following equation (37) where d = a/kT (p is the width of the Gaussian distribution density of states), Z is a parameter that characterizes the degree of positional disorder, E is the electric field, is a prefactor mobihty, and Cis an empirical constant given as 2.9 X lO " (cm/V). ...

Figure 7. Diffusion and drift of mobile holes. Top the three curves show three instants in the process of drift and diffusion, equally spaced in time.-, A Gaussian distribution of mobile holes is...

FIGURE 1.1.13 Evolution of the hole mobility as a function of the width of the Gaussian distribution of the intermolecular distances in the one-dimensional array of pentacene molecules. 

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