Hole electric field dependence

Figure 11-5. Internal pholoemission response as a function of photon energy for (a) an AI/MEH-PPV/ Ca structure biased to collect elections and (b) for the same AtfMEII-PPV/Ca structure and a Cut MEH-PPV/Ca structure biased to collect holes. Inset in (a) shows the electric field dependence of the photorcspon.se ihicshold for the AI/MEH-PPV/Ca structure biased to collect electrons.

Figure 12-30. The electric field dependence of the hole mobility in McLPPP ut different lem-peralures.

It is important to realize that the migration in an electric field depends on the magnitude of the concentration of the charged species, whereas the diffusion process depends only on the concentration gradient, but not on the concentration itself. Accordingly, the mobility rather than the concentration of electrons and holes has to be small in practically useful solid electrolytes. This has been confirmed for several compounds which have been investigated in this regard so far [13]. 

Warta W, Karl N (1985) Hot holes in naphthalene high, electric-field-dependent mobilities. Phys Rev B 32 1172... 

The electric field dependence of the hole mobility in a series of PVK TNF films of varying composition is shown in Fig. 5(b)17. The carrier drift mobilities are extremely low and strongly dependent on the electric field. Similar electric field dependence was observed for electron drift mobilities. The mobilities obey the empirical relation... 

Figure 7 (left) The electric field dependence of the time-ofiflight hole mobility for poly(9.9-dioctylfluorene) films. The open circles are data for a film prepared by spin coating. The filled circles are for a sample spin coated on a rubbed polyimide orientation layer, annealed in the nematic phase and then quenched to form a glassy film. 

For holes, the experimental data for the electric-field dependence are nearly identical ri (F) = rj (F). This holds both for pristine and for non-pristine crystals [26]. 

Fig. 2.10 Electric field dependence of the mobility, fi, of holes in poly-(methyl phenyl silylene) at various temperatures (1) 295 K, (2) 312 K,...

Blom, P.W.M., M.J.M. de Jong, and M.G. van Muster. 1997. Electric-field dependence of the hole mobility in poly(p-phenylene vinylene). Phys Rev B 55 R656. 

It was established that the elevated hole drift mobility of DCZB polymers is due to the reduced concentration of trapping sites which are in fact excimer-forming sites. This was confirmed by the temperature and electric field dependencies of the hole mobility. These observations support the idea that eharge transport and exciton transport have... 

Hertel D, Soh EV, Bassler H, Rothberg LJ (2002) Electric field dependent generation of geminate electron-hole pairs in a ladder-type n -conjugated polymer probed by fluorescence quenching and delayed field collection of chaige carriers. Chem Phys Lett 361 99... 

Warta, W. and Karl, N., Hot holes in naphthalene high electric field dependent mobihties, Phys. Rev., B32, 1172, 1985. 

Electric field dependence of the hole velocities in high quality naphthalene crystals obtained by the time-of-flight method with the electric field F parallel to a-axis (48). From Warta and Karl (48). 

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