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Highest occupied molecular orbital energy levels

S. Xiao, A. C. Stuart, S. Liu, W. You, Conjugated Polymers Based on Benzo[2,l-b 3,4- b JDithiophene with Low-Lying Highest Occupied Molecular Orbital Energy Levels for Organic Photovoltaics. ACS Appl. Mater. Interfaces 2009, 1,1613-1621. [Pg.97]

S. Xiao, et al. Conjugated polymers based on benzo [2, 1-b 3, 4-b ] dithiophene with low-lying highest occupied molecular orbital energy levels for organic photovoltaics. ACS Applied Materials Interfaces, 2009. 1(7) p. 1613-1621. [Pg.337]

Figure 1. Energy diagrams for FeS, ZnS, and MnS as potential donors of photo-excited electrons (left column) and for the biologically relevant electron acceptors (right column). The Highest Occupied Molecular Orbital (HOMO) level in the ence bands of each semiconductor is shown by a darker color than the respective Lowest Unoccupied Molecular Orbital (LUMO) level in the conduction band. The picture is based on data from references [72,99,122,262,264]. Figure 1. Energy diagrams for FeS, ZnS, and MnS as potential donors of photo-excited electrons (left column) and for the biologically relevant electron acceptors (right column). The Highest Occupied Molecular Orbital (HOMO) level in the ence bands of each semiconductor is shown by a darker color than the respective Lowest Unoccupied Molecular Orbital (LUMO) level in the conduction band. The picture is based on data from references [72,99,122,262,264].
The aim of model theories [51], which predict band offsets through the macroscopic parameters of the materials, is to find or specify a reference energy level ( r) for the metals and semiconductors. Upon formation of the heterojunction, one merely hues up the reference levels in the two materials. In this case, the valence band offset between two materials is simply obtained as the difference between the two valence band maxima, measured relatively to such a reference level. enables one to define an absolute scale for all semiconductors or metals. Once is calculated, we need to know only the semiconductor s valence band maximum Ev (or the highest occupied molecular orbital (HOMO) levels in molecules) relative to for each material, which following Tersoff s approach [51] we denote as ... [Pg.796]

At the donor/acceptor interface (step III in Figure 5), exciton D is quenched via electron transfer to the lowest unoccupied molecular orbital (LUMO) level of the acceptor molecule (A°). On the contrary, exciton A is quenched via hole transfer to the highest occupied molecular orbital (HOMO) level of the donor molecule (D ). Both pathways result in the formation of the same charge separated state D+ A . Positive and negative charges in this ion pair are bond by Coulomb attraction forces and also denoted as geminate polaron pair. This pair can dissociate in the electric field induced by the potential jump at the heterojunction and/or by the difference in the electrode work functions. At the same time, the energy difference... [Pg.2076]

For the He atom, when the KS equation is solved with the exact potential as shown in Figure 2, the highest occupied molecular orbital (HOMO) level is at —24.592eV, the negative of the ionization energy of helium. In exact DFT, Koopmans theorem, which states I = —eHOMO, is exactly true. In ground-state DFT, this is the only energy level of the fictitious KS system that has an immediate physical interpretation. [Pg.99]

The most extensive calculations of the electronic structure of fullerenes so far have been done for Ceo- Representative results for the energy levels of the free Ceo molecule are shown in Fig. 5(a) [60]. Because of the molecular nature of solid C o, the electronic structure for the solid phase is expected to be closely related to that of the free molecule [61]. An LDA calculation for the crystalline phase is shown in Fig. 5(b) for the energy bands derived from the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) for Cgo, and the band gap between the LUMO and HOMO-derived energy bands is shown on the figure. The LDA calculations are one-electron treatments which tend to underestimate the actual bandgap. Nevertheless, such calculations are widely used in the fullerene literature to provide physical insights about many of the physical properties. [Pg.47]

FuUerene compounds have receieved a lot of attention in recent years. In this exercise we predict the energy of Cgg and look at its highest occupied molecular orbital, predicted at the Hartree-Fock level with the 3-21G basi set. Include SCF=1ight in the route section of the job. [Pg.31]

Each energy level in the band is called a state. The important quantity to look at is the density of states (DOS), i.e. the number of states at a given energy. The DOS of transition metals are often depicted as smooth curves (Fig. 6.10), but in reality DOS curves show complicated structure, due to crystal structure and symmetry. The bands are filled with valence electrons of the atoms up to the Fermi level. In a molecule one would call this level the highest occupied molecular orbital or HOMO. [Pg.225]

In the ground state of a covalent bond, the molecular orbital is occupied by at least one, usually two electrons with anti-parallel spins. This is said to be the HOMO level that is, the highest occupied molecular orbital. If the bond is slightly sheared, the kinetic energies of its electrons is not affected, but the... [Pg.35]


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Highest

Highest Level

Highest occupied molecular

Highest occupied molecular orbital

Highest occupied molecular orbital energy

Highest occupied molecular orbital hole injection energy levels

Highest-energy occupied molecular

Highest-energy occupied molecular orbitals

Molecular energies

Molecular energies orbital

Molecular level

Molecular orbital Energy levels

Molecular orbital occupied

Molecular orbitals energies

Molecular orbitals highest occupied

Molecular orbitals orbital energies

Molecular orbitals, energy levels

Occupied levels

Occupied molecular orbitals

Occupied orbital

Occupied orbitals

Orbital energy

Orbital energy level

Orbitals energy

Orbitals highest occupied

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