High-Throughput LPE

The efficient results presented up to now were principally obtained by using a laboratory scale LPE apparatus (less than 5 x 5 cm2). They proved the efficiency of this technique to obtain high-quality epitaxial layers suitable for the fabrication of efficient solar cells. 

Canon [66] demonstrated LPE growth also on 5 in. Si wafers with porous silicon for further detachment. They also used vertical dipping system with In solvent (4N) with a quartz carrier. Growth rate was in the range of 

1-1 jj,m min-1 depending on saturation temperature, cooling rate and direction or situation of the substrate in the solvent. 

To know completely about LPE, some specific books can be of great interest, especially [4] and [67]. 

The author acknowledges Dr. Marc Gavand and Pr. Andre Laugier, who introduced him the LPE technique. He also thanks his present and former colleagues and students, especially, Dr. Jed Kraiem, Dr. Fatima Abdo and Dr. Sylvain Joblot. 

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