High-resolution transition electron microscope

Fig. 5.5 High-resolution transition electron microscope (HRTEM) picture of a synthetic TIMREX KC44 graphite particle describing the graphite texture as agglomeration of intergrown single crystal domains...

In Fig. 5.15 high-resolution transition electron microscope (HRTEM) pictures compare the primary particle microstructure of an acetylene black (A) showing the typical planar graphite layers with the microstructure of Super P (B) showing the large distorted graphene layers. 

Deep state experiments measure carrier capture or emission rates, processes that are not sensitive to the microscopic structure (such as chemical composition, symmetry, or spin) of the defect. Therefore, the various techniques for analysis of deep states can at best only show a correlation with a particular impurity when used in conjunction with doping experiments. A definitive, unambiguous assignment is impossible without the aid of other experiments, such as high-resolution absorption or luminescence spectroscopy, or electron paramagnetic resonance (EPR). Unfortunately, these techniques are usually inapplicable to most deep levels. However, when absorption or luminescence lines are detectable and sharp, the symmetry of a defect can be deduced from Zeeman or stress experiments (see, for example, Ozeki et al. 1979b). In certain cases the energy of a transition is sensitive to the isotopic mass of an impurity, and use of isotopically enriched dopants can yield a positive chemical identification of a level. 

The reduction of transition-metal species under the intense electron irradiation of the high-resolution electron microscope used in [37] additionally represents a process that could also lead to Sc-L2>3 data deviating from those presented here, which were measured with the gentle method of soft x-ray absorption. 

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