High energy implantation

Figure 3 Schematic diagram of an advanced metal ion-implantation method. High-energy implantation (bottom) was used in the present study.

Ti ion-implanted titanium oxides exhibited no shift, showing that such a shift is not caused by the high energy implantation process itself, but to some interaction of the transition metal ions with the titanium oxide catalyst. As can be seen in Fig. 10-1 ((b)—(d)), the absorption band of the Cr ion-implanted titanium oxide shifts smoothly to visible light regions, the extent of the red shift depending on the amount and type of metal ions implanted, with the absorption maximum and... 

Fig. 14.8. Schematic dopant distributions in a conventional well formed by the drive-in diffusion and in a retrograde well formed by high energy implantation...

High energy implantation typically refers to doses in the 1011—1013 cm"2 at energies up to several MeV. The most common applications for which high energy implanters are used include retrograde and triple well formation, buried layer formation, and field isolation. 

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