Halide CVD of BSCCO Thin Films

Two reactor designs have been reported for BSCCO halide CVD (i) an open-tube (OTCVD) system and (ii) a low-pressure CVD (LPCVD) system equipped with arf- 

Superconducting BSCCO films were produced in situ on 3 diameter sapphire substrates by plasma-enhanced halide LPCVD [266, 267]. Films consisting mainly of the Bi-2212 phase were deposited with metal halide precursors at 580°C under 0.1 Torr system pressure in the presence of a rf plasma. These films became superconducting at 70 K with = 2.5 x 10 Acm at 10 K. Plasma-enhanced halide LPCVD was also used to grow Bi-Sr-Ca-Cu-O/Bi-Sr-Cu-O superconductor-normal metal (S-N) heterostructures [259], HRTEM images showed the S/N interface to be atomically abrupt while variable temperature resistivity measurements gave T. = 75 K for the S/N heterostructure. 

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