Growth rate, in crystallization

Takubo, H. Kume, S. Koizumi, M. Relationship between supersaturation, solution velocity, crystal habit and growth rate in crystallization of ammonium phosphate (NH4H2PO4). J. Cryst. Growth 1984, 67 (2), 217-226. 

The thermal conductivity of GaAs (XcaAs = 0.46 W/cm K at 300 K) is lower than that of silicon (Xsi = 1.41 W/cm K at 300 K). Therefore, heat dissipation and extraction from operating devices is less effective and limits the growth rate in crystal growth from the melt. 

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