Growth of GaN on Porous TiN

High temperature nucleation of GaN on TiN is effectively suppressed because the Ga has a much higher sticking coefficient (near unity) [25] 

From the discussion above, we note that the coalescence of GaN surface on porous TiN can be difficult because the (1101) facets of GaN 

The density of effective GaN nucleation islands increases with decreasing growth pressure. As will be shown later, although a lower GaN nucleation pressure generates dense GaN nucleation islands, the efficacy of TD reduction by porous TiN is not degraded. 

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