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Growth along

Figure I. A crystal of sodium chloride (lower left) showing arrangement of atoms within the crystal and two principal directions of growth. Growth perpendicular to cube face encounters layers of atoms shown at upper left. Growth along diagonal of cube encounters alternating layers shown at right... Figure I. A crystal of sodium chloride (lower left) showing arrangement of atoms within the crystal and two principal directions of growth. Growth perpendicular to cube face encounters layers of atoms shown at upper left. Growth along diagonal of cube encounters alternating layers shown at right...
Figure 2. An octahedron resulting from rapid growth perpendicular to faces of cube and a skeleton crystal resulting from rapid growth along diagonals of cube... Figure 2. An octahedron resulting from rapid growth perpendicular to faces of cube and a skeleton crystal resulting from rapid growth along diagonals of cube...
Growth along the one axis Capping agents stabiiize other pianes... [Pg.309]

Mochizuki, T. Mori, Y.H. (2006). Clathrate-hydrate film growth along water/hydrate-former phase boundaries - numerical heat-transfer study. J. Crystal Growth, 290 (2), 642-652. [Pg.50]

Crystal growth Consider the case for crystal growth along one direction (hence a one-dimensional problem). Define the initial interface to be at x = 0 and the crystal is on the side with negative x (left-hand side) and the melt is on the positive side (Section 3.4.6). Due to crystal growth, the interface advances to the positive side. Define the interface position at time t to be at x = Xq, where Xq > 0 is a function of time. Let w be the mass fraction of the main equilibriumdetermining component then the diffusion equation in the melt is... [Pg.353]

This is only a highly simplified version of the interaction of screw dislocations. The situation is more complicated where there is nonuniform growth along the steps of the two screw dislocations, where both steps are rotating in the same direction, etc. [Pg.611]

These data indicate that sintering resistance is related not only to the formation of a layered-alumina structure. It appears that a critical Ba content is required for the effective suppression of crystal growth along the c axis of crystallites. Indeed, in BaAli4022, sintering proceeded even after the formation of Ba-P-Al203. [Pg.100]


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See also in sourсe #XX -- [ Pg.11 , Pg.403 ]




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Growth Technology of Four-Inch Langasite Along

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