Group III—V materials

Recent studies of plasma etching have also been driven by the need to improve the production of submicron-sized circuit elements. Efforts have been focused on complex plasma recipes in which more than one gas species is added to the plasma to create multi-radical plasmas (217, 218). Another focus has been on finding plasma systems capable of etching a new generation of semiconducting materials such as Ga-As and other group III—V materials (219-223). 

Group III-V materials Optoelectronic Horizontal boat, horizontal... 

The formation of an electron-deficient bond (as in reaction 35) can also be instigated by photogenerated holes. It has been shown that the resultant intermediates (especially for Group III-V materials) can act as effective electron traps for CB... 

Activities, stoichiometric liquid component, Group III-V materials, 286-88... 

The chemistry of group III-V materials has proven to be more difficult with regards to designing a system with the attributes of both rapid and complete, yet controlled. 

Fig. 14.7 Spectral coverage of the visible to infrared region by different semiconductor laser materials while for junction lasers room-temperature operation is only possible up to 2-3 pm for Group III-V materials, quantum cascade lasers become a promising alternative to the cryogenic cooled Group IV-VI lead-salt diode lasers (Reprinted with permission from Werle et al. (2002). Copyright 2002 Elsevier)...

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